The Trade-Off between Surge-Current Capability and Reverse- Recovery Behaviour of High-Voltage Power Diodes

نویسندگان

  • R. Baburske
  • J. Lutz
  • H.-J. Schulze
  • T. Basler
  • R. Siemieniec
  • M. Pfaffenlehner
  • H. P. Felsl
  • F.-J. Niedernostheide
  • F. Pfirsch
چکیده

This paper discusses the trade-off between surge-current capability on the one hand and reverse-recovery charge, ruggedness and softness of high-voltage diodes on the other hand. Diodes with a CIBH (Controlled Injection of Backside Holes) structure in front of the cathode and a highly doped p-region combine high surge-current capability with reverse-recovery ruggedness and softness. This can be further improved by embedding a SPEED (Self-adjusting p-Emitter Efficiency Diode) or an IDEE (Inverse injection Dependency of Emitter Efficiency) structure in front of the anode. The IDEE concept causes a decrease of the emitter efficiency at low current densities and an increase of the emitter efficiency at high current densities. This reduces the reverse-recovery charge and further increases the surge-current capability. It is shown that the recently introduced IDEE concept works more efficiently than the SPEED concept.

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تاریخ انتشار 2010